Effect of boron carbide additive and sintering temperature - Dwelling time on silicon carbide properties

Shock-wave strength properties of boron carbide and silicon carbide

Boron carbide/n-silicon carbide heterojunction diodes

Stabilization of boron carbide via silicon doping.

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in ...

Superconductivity in heavily boron-doped silicon carbide.

The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...

Compression and Associated Properties of Boron Carbide

Our present work presents a direct association of the observed loss of shear strength in boron carbide under plane shock wave compression to amorphization in boron carbide under triaxial stress compression. This evidence is obtained from in-situ measurement of Raman, and infrared vibrational spectra of boron carbide confined in a Diamond Anvil Cell (DAC) under hydrostatic and non-hydrostatic pr...